Datasheet > IKW50N60TA

IKW50N60TA

更新时间： 2024-02-20 21:47:37

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	591K
描述
Insulated Gate Bipolar Transistor,

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技术参数
数据手册

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IKW50N60TA 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	7.81
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

IKW50N60TA 数据手册

IKW50N60T

TRENCHSTOP™ Series

Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,

fast recovery anti-parallel Emitter Controlled HE diode

Features:



Very low V_CE(sat)1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for :

- Frequency Converters

- Uninterrupted Power Supply



TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed



Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel Emitter Controlled HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

PG-TO247-3

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking

Package

IKW50N60T

600V

50A

1.5V

K50T60

PG-TO247-3

175C

Maximum Ratings

Parameter

Symbol

Value

Unit

V_{C E}

600

Collector-emitter voltage, T_j≥ 25C

DC collector current, limited by T_jmax

T_C= 25C

80²⁾

I_C

T_C= 100C

Pulsed collector current, t_plimited by T_jmax

I_{C p u l s}

150

Turn off safe operating area, V_CE= 600V, T_j= 175C, t_p= 1µs

Diode forward current, limited by T_jmax

T_C= 25C

100

I_F

T_C= 100C

Diode pulsed current, t_plimited by T_jmax

I_{F p u l s}

V_{G E}

150

Gate-emitter voltage

Short circuit withstand time³⁾

20

t_{S C}

s

V_GE= 15V, V_CC 400V, T_j 150C

Power dissipation T_C= 25C

P_{t o t}

T_j

333

Operating junction temperature

Storage temperature

-40...+175

-55...+150

260

T_{s t g}

C

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

¹J-STD-020 and JESD-022

²⁾Value limited by bond wire

³⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.6 20.09.2013

IFAG IPC TD VLS

12 3 4 5 6 7...13

中文翻译

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与IKW50N60TA相关器件

型号	品牌	获取价格	描述	数据表
IKW50N60TFKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PL
IKW50N60TXK	INFINEON	获取价格	暂无描述
IKW50N65EH5	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65EH5_15	INFINEON	获取价格	650V DuoPack IGBT and full-rated diode High speed series fifth generation
IKW50N65ES5	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N65ES5XKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
IKW50N65ET7	INFINEON	获取价格	TRENCHSTOP™ IGBT7
IKW50N65F5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation
IKW50N65F5FKSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IKW50N65H5	INFINEON	获取价格	650V DuoPack IGBT and Diode High speed switching series fifth generation

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