Datasheet > FGH80N60FD2TU

FGH80N60FD2TU

更新时间： 2023-09-03 20:33:34

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	406K
描述
IGBT，600V，场截止

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中文翻译

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数据手册

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FGH80N60FD2TU 数据手册

IGBT - Field Stop

600 V, 40 A

FGH80N60FD2

Description

Using novel field stop IGBT technology, ON Semiconductor’s field

stop IGBTs offer the optimum performance for induction heating and

PFC applications where low conduction and switching losses are

essential.

www.onsemi.com

CES

Features

600 V

40 A

• High Current Capability

• Low Saturation Voltage: V

• High Input Impedance

• Fast Switching

= 1.8 V (Typ.) @ I = 40 A

CE(sat)

• This Device is Pb−Free and is RoHS Compliant

Applications

• Induction Heating, PFC

COLLECTOR

(FLANGE)

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FGH80N60

FD2

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH80N60FD2

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2020 − Rev. 3

FGH80N60FD2/D

12 3 4 5 6 7...9

中文翻译

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