Datasheet > FGH75T65UPD-F085

FGH75T65UPD-F085

更新时间： 2023-09-03 20:39:58

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	395K
描述
650 V、75 A、1.69 V、TO-247场截止 IGBT

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中文翻译

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数据手册

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FGH75T65UPD-F085 数据手册

IGBT - Field Stop, Trench

650 V, 75 A

FGH75T65UPD-F085

Description

Using Novel Field Stop Trench IGBT Technology,

ON Semiconductor’s new series of Field Stop Trench IGBTs offer

the optimum performance for Automotive chargers, Solar Inverter,

UPS and Digital Power Generator where low conduction and

switching losses are essential.

www.onsemi.com

Features

• Maximum Junction Temperature : T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

• High Input Impedance

= 1.65 V (Typ.) @ I = 75 A

CE(sat)

• Tightened Parameter Distribution

• AEC−Q101Qualified and PPAP Capable

• This Device is Pb−Free and is RoHS Compliant

Applications

• Automotive Chargers, Converters, High Voltage Auxiliaries

• Solar Inverters, UPS, Digital Power Generator

COLLECTOR

(FLANGE)

TO−247−3LD

CASE 340CK

MARKING DIAGRAM

$Y&Z&3&K

FGH75T65

UPD

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH75T65UPD

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FGH75T65UPD−F085/D

February, 2020 − Rev. 4

12 3 4 5 6 7...10

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