Datasheet > FGH75T65SQD-F155

FGH75T65SQD-F155

更新时间： 2023-09-03 20:38:33

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	528K
描述
650 V、75 A 场截止沟道 IGBT

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FGH75T65SQD-F155 数据手册

IGBT - Field Stop, Trench

650 V, 75 A

FGH75T65SQD

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4 generation IGBTs offer the optimum

www.onsemi.com

performance for solar inverter, UPS, Welder, Telecom, ESS and PFC

applications where low conduction and switching losses are essential.

Features

• Maximum Junction Temperature : T =175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

=1.6 V(Typ.) @ I = 75 A

CE(sat)

• 100% of the Parts Tested for I (1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

TO−247−3LD

CASE 340CH

MARKING DIAGRAM

$Y&Z&3&K

FGH75T65SQD

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH75T65SQD = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

April, 2020 − Rev. 5

FGH75T65SQD/D

12 3 4 5 6 7...10

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