Datasheet > FGH75T65SQDTL4

FGH75T65SQDTL4

更新时间： 2023-09-03 20:31:57

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
10页	700K
描述
IGBT，650V，75A，场截止沟槽

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FGH75T65SQDTL4 数据手册

IGBT - Field Stop, Trench

650 V, 75 A

FGH75T65SQDTL4

Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 4 generation IGBTs offer the optimum

www.onsemi.com

performance for solar inverter, UPS, welder, telecom, ESS and PFC

applications where low conduction and switching losses are essential.

CES

Features

650 V

75 A

• Maximum Junction Temperature: T = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.6 V @ I = 75 A

E1: Kelvin Emitter

E2: Power Emitter

CE(sat)

• 100% of the Parts Tested for I

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

TO−247−4LD

CASE 340CJ

MARKING DIAGRAM

$Y&Z&3&K

FGH75T65

SQDTL4

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH75T65SQDTL4= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

December, 2019 − Rev. 2

FGH75T65SQDTL4/D

12 3 4 5 6 7...10

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