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FGH75T65SQDNL4

更新时间： 2023-09-03 20:35:17
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
11页 346K
描述
IGBT，场截止 IV/4 引线

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FGH75T65SQDNL4 数据手册

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DATA SHEET  
www.onsemi.com  
IGBT - Field Stop, IV/4 Lead  
FGH75T65SQDNL4  
75 A, 650 V  
VCEsat (Typ.) = 1.6 V  
This Insulated Gate Bipolar Transistor (IGBT) features a robust and  
cost effective Field Stop IV Trench construction, and provides  
superior performance in demanding switching applications, offering  
both low on state voltage and minimal switching loss. In addition, this  
new device is packaged in a TO−247−4L package that provides  
C
G
significant reduction in E Losses compared to standard TO−247−3L  
on  
package. The IGBT is well suited for UPS and solar applications.  
Incorporated into the device is a soft and fast co−packaged free  
wheeling diode with a low forward voltage.  
E1  
E
Features  
• Extremely Efficient Trench with Field Stop Technology  
• T  
= 175°C  
Jmax  
• Improved Gate Control Lowers Switching Losses  
TO−247−4LD  
CASE 340CJ  
C
• Separate Emitter Drive Pin  
E
E1  
• TO−247−4L for Minimal E Losses  
on  
G
• Optimized for High Speed Switching  
• 100% of the Parts Tested for I  
LM  
MARKING DIAGRAM  
• These are Pb−Free Devices  
Typical Applications  
• Solar Inverter  
FGH75T65  
SQDNL4  
AYWWG  
• Uninterruptible Power Inverter Supplies (UPS)  
• Neutral Point Clamp Topology  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
V
Value  
Unit  
V
Collector−emitter voltage  
650  
CES  
Collector current  
@ TC = 25°C  
I
A
C
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
150  
75  
@ TC = 100°C  
Diode Forward Current  
@ TC = 25°C  
I
A
= Pb−Free Package  
F
150  
75  
@ TC = 100°C  
ORDERING INFORMATION  
Diode Pulsed Current  
I
300  
A
A
FM  
T
Limited by T Max  
PULSE  
J
Device  
Package  
Shipping  
Pulsed collector current, T  
I
300  
pulse  
CM  
FGH75T65SQDNL4  
TO−247  
30 Units / Rail  
limited by T  
I
Jmax  
LM  
(Pb−Free)  
Gate−emitter voltage  
V
$20  
$30  
V
V
GE  
Transient gate−emitter voltage  
(T = 5 ms, D < 0.10)  
PULSE  
Power Dissipation  
P
D
W
@ TC = 25°C  
375  
188  
@ TC = 100°C  
Operating junction temperature range  
Storage temperature range  
T
−55 to +175  
−55 to +175  
260  
°C  
°C  
°C  
J
T
stg  
Lead temperature for soldering, 1/8″  
from case for 5 seconds  
T
SLD  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
March, 2022 − Rev. 5  
FGH75T65SQDNL4/D  
1234567...11

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