Datasheet > FGH75T65SHDT-F155

FGH75T65SHDT-F155

更新时间： 2023-09-03 20:30:44

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	2192K
描述
IGBT，650V，75A 场截止沟槽

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DATA SHEET

www.onsemi.com

IGBT - Field Stop, Trench

650 V, 75 A

FGH75T65SHDT

Description

Using novel field stop IGBT technology, onsemi’s new series of

field stop 3 generation IGBTs offer the optimum performance for

solar inverter, UPS, welder, telecom, ESS and PFC applications where

low conduction and switching losses are essential.

Features

• Maximum Junction Temperature: T =175°C

TO−247−3LD

CASE 340CH

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

= 1.6 V(Typ.) @ I = 75 A

• 100% of the Parts Tested for I (Note 1)

CE(sat)

MARKING DIAGRAMS

• High Input Impedance

• Fast Switching

$Y&Z&3&K

FGH75T65

SHDT

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Solar Inverter, UPS, Welder, Telecom, ESS, PFC

= onsemi Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

FGH75T65SHDT

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

Spetember, 2021 − Rev. 4

FGH75T65SHDT/D

12 3 4 5 6 7...9

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