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FGH75T65SHDTL4 PDF预览

FGH75T65SHDTL4

更新时间: 2023-09-03 20:38:11
品牌 Logo 应用领域
安森美 - ONSEMI 双极性晶体管
页数 文件大小 规格书
9页 572K
描述
IGBT,650V,75A 场截止沟槽

FGH75T65SHDTL4 数据手册

 浏览型号FGH75T65SHDTL4的Datasheet PDF文件第2页浏览型号FGH75T65SHDTL4的Datasheet PDF文件第3页浏览型号FGH75T65SHDTL4的Datasheet PDF文件第4页浏览型号FGH75T65SHDTL4的Datasheet PDF文件第5页浏览型号FGH75T65SHDTL4的Datasheet PDF文件第6页浏览型号FGH75T65SHDTL4的Datasheet PDF文件第7页 
IGBT - Field Stop, Trench  
650 V, 75 A  
FGH75T65SHDTL4  
Description  
Using novel field stop IGBT technology, ON Semiconductor’s new  
rd  
series of field stop 3 generation IGBTs offer the optimum  
www.onsemi.com  
performance for solar inverter, UPS, welder, telecom, ESS and PFC  
applications where low conduction and switching losses are essential.  
V
I
C
CES  
Features  
650 V  
75 A  
Maximum Junction Temperature: T =175°C  
J
C
Positive Temperature Coefficient for Easy Parallel Operating  
High Current Capability  
E1: Kelvin Emitter  
E2: Power Emitter  
Low Saturation Voltage: V  
= 1.6 V (Typ.) @ I = 75 A  
C
CE(sat)  
100% of the Parts Tested for I  
High Input Impedance  
Fast Switching  
LM  
G
E1  
E2  
Tighten Parameter Distribution  
This Device is PbFree and is RoHS Compliant  
Do Not Recommend for Reflow and Full PKG Dipping  
Applications  
Solar Inverter, UPS, Welder, Telecom, ESS, PFC  
C
E2  
E1  
G
TO2474LD  
CASE 340CJ  
MARKING DIAGRAM  
$Y&Z&3&K  
FGH75T65  
SHDTL4  
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
FGH75T65SHDTL4 = Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
December, 2019 Rev. 2  
FGH75T65SHDTL4/D  

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