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FGH75N60UFTU PDF预览

FGH75N60UFTU

更新时间: 2024-02-12 03:36:00
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管
页数 文件大小 规格书
8页 259K
描述
600V, 75A Field Stop IGBT

FGH75N60UFTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:8.49Is Samacsys:N
最大集电极电流 (IC):150 A集电极-发射极最大电压:600 V
最大降落时间(tf):80 ns门极发射器阈值电压最大值:6.5 V
门极-发射极最大电压:20 VJESD-609代码:e3
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):452 W
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FGH75N60UFTU 数据手册

 浏览型号FGH75N60UFTU的Datasheet PDF文件第2页浏览型号FGH75N60UFTU的Datasheet PDF文件第3页浏览型号FGH75N60UFTU的Datasheet PDF文件第4页浏览型号FGH75N60UFTU的Datasheet PDF文件第5页浏览型号FGH75N60UFTU的Datasheet PDF文件第6页浏览型号FGH75N60UFTU的Datasheet PDF文件第7页 
April 2009  
FGH75N60UF  
tm  
600V, 75A Field Stop IGBT  
Features  
General Description  
High Current Capability  
Low Saturation Voltage: VCE(sat) =1.9V @ IC = 75A  
High Input Impedance  
Using Novel Field Stop IGBT Technology, Fairchild’s new  
series of Field Stop IGBTs offer the optimum performance for  
Induction Heating, UPS, SMPS and PFC applications where low  
conduction and switching losses are essential.  
Fast Switching  
RoHS Compliant  
Applications  
Induction Heating, UPS, SMPS, PFC  
E
C
G
COLLECTOR  
(FLANGE)  
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Units  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
V
V
A
A
A
20  
@ TC = 25oC  
@ TC = 100oC  
150  
IC  
ICM (1)  
PD  
Collector Current  
75  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Pulsed Collector Current  
225  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
452  
W
W
oC  
oC  
181  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RJC(IGBT)  
RJA  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Typ.  
Max.  
0.276  
40  
Units  
oC/W  
oC/W  
-
-
©2009 Fairchild Semiconductor Corporation  
FGH75N60UF Rev. A1  
1
www.fairchildsemi.com  

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