是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-247 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.82 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 90 ns | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 625 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 187 ns | 标称接通时间 (ton): | 59 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FGK60N6S2D | FAIRCHILD |
类似代替 ![]() |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGH60T65SHD-F155 | ONSEMI |
获取价格 |
IGBT,650V,60A,场截止沟槽 |
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FGH60T65SQD-F155 | ONSEMI |
获取价格 |
IGBT,650V,60A,场截止沟槽 |
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FGH75N60SF | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
![]() |
FGH75N60SFTU | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
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FGH75N60UF | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
![]() |
FGH75N60UFTU | FAIRCHILD |
获取价格 |
600V, 75A Field Stop IGBT |
![]() |
FGH75N60UFTU | ONSEMI |
获取价格 |
IGBT,600V,75A,场截止 |
![]() |
FGH75T65SHD-F155 | ONSEMI |
获取价格 |
IGBT,650V,75A 场截止沟槽 |
![]() |
FGH75T65SHDT-F155 | ONSEMI |
获取价格 |
IGBT,650V,75A 场截止沟槽 |
![]() |
FGH75T65SHDTL4 | ONSEMI |
获取价格 |
IGBT,650V,75A 场截止沟槽 |
![]() |