FGK60N6S2D

更新时间： 2024-09-12 22:29:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管开关双极性晶体管
页数	文件大小	规格书
9页	182K
描述
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

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FGK60N6S2D 数据手册

June 2002

FGK60N6S2D

600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth^TMDiode

General Description

Features

The FGK60N6S2D is a Low Gate Charge, Low Plateau

Voltage SMPS II IGBT combining the fast switching speed

of the SMPS IGBTs along with lower gate charge, plateau

voltage and avalanche capability (UIS). These LGC devices

shorten delay times, and reduce the power requirement of

the gate drive. These devices are ideally suited for high volt-

age switched mode power supply applications where low

conduction loss, fast switching times and UIS capability are

essential. SMPS II LGC devices have been specially de-

signed for:

• 100kHz Operation at 390V, 52A

• 200kHZ Operation at 390V, 31A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125 C

• Low Gate Charge . . . . . . . . 140nC at V = 15V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ

• Low Conduction Loss

•

Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits

IGBT formerly Developmental Type TA49346

Diode formerly Developmental Type TA49393

JEDEC STYLE STRETCH TO-247

Package

Symbol

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Collector to Emitter Breakdown Voltage

Collector Current Continuous, T = 25°C

Ratings

Units

600

CES

C25

Collector Current Continuous, T = 110°C

C110

Collector Current Pulsed (Note 1)

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed

320

±20

GES

GEM

±30

SSOA

Switching Safe Operating Area at T = 150°C, Figure 2

200A at 600V

700

Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V

Power Dissipation Total T = 25°C

625

Power Dissipation Derating T > 25°C

W/°C

°C

Operating Junction Temperature Range

Storage Junction Temperature Range

-55 to 150

°C

STG

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

FGK60N6S2D Rev. A1

12 3 4 5 6 7...9

中文翻译

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FGK60N6S2D 替代型号

型号	品牌	替代类型	描述	数据表
FGH60N6S2	FAIRCHILD	类似代替	600V, SMPS II Series N-Channel IGBT

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FGL.0K.302.CLLC40Z	ETC	获取价格	CONN PLUG FMALE 2POS SOLDER CUP
FGL.0K.302.CLLC45	ETC	获取价格	CONN PLUG FMALE 2POS SOLDER CUP
FGL.0K.302.CLLC45Z	ETC	获取价格	CONN PLUG FMALE 2POS SOLDER CUP
FGL.0K.302.CLMC45	ETC	获取价格	CONN PLUG FMALE 2POS GOLD CRIMP
FGL.0K.302.CYMC50Z	ETC	获取价格	CONN PLUG FMALE 2POS GOLD CRIMP
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FGL.0K.303.CLLC35Z	ETC	获取价格	CONN PLUG FMALE 3POS SOLDER CUP
FGL.0K.303.CLLC40	ETC	获取价格	CONN PLUG FMALE 3POS SOLDER CUP

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