5秒后页面跳转
FGB3040CS PDF预览

FGB3040CS

更新时间: 2024-11-08 03:36:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管双极性晶体管
页数 文件大小 规格书
9页 432K
描述
EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT

FGB3040CS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, TO-263, 6 PIN针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.66
Is Samacsys:N最大集电极电流 (IC):21 A
集电极-发射极最大电压:430 V配置:SINGLE
最大降落时间(tf):15000 ns门极发射器阈值电压最大值:2.2 V
门极-发射极最大电压:12 VJESD-30 代码:R-PSSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
最大上升时间(tr):7000 ns子类别:Insulated Gate BIP Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称断开时间 (toff):7300 ns标称接通时间 (ton):2100 ns
Base Number Matches:1

FGB3040CS 数据手册

 浏览型号FGB3040CS的Datasheet PDF文件第2页浏览型号FGB3040CS的Datasheet PDF文件第3页浏览型号FGB3040CS的Datasheet PDF文件第4页浏览型号FGB3040CS的Datasheet PDF文件第5页浏览型号FGB3040CS的Datasheet PDF文件第6页浏览型号FGB3040CS的Datasheet PDF文件第7页 
May 2007  
FGB3040CS  
tm  
TM  
EcoSPARK 300mJ, 400V, N-Channel Current Sensing Ignition IGBT  
General Description  
Applications  
The FGB3040CS is an lgnition IGBT that offers outstand-  
ing SCIS capability along with a ratiometric emitter current  
sensing capability. This sensing is based on a emitter  
active area ratio of 200:1. The output is provided through a  
fourth (sense) lead. This signal provides a current level  
that is proportional to the main collector to emitter current.  
The effective ratio as measured on the sense lead is a  
function of the sense output, the collector current and the  
gate to emitter drive voltage.  
„ Smart Automotive lgnition Coil Driver Circuits  
„ ECU Based Systems  
„ Distributorless Based Systems  
„ Coil on Plug Based Systems  
Features  
„ SCIS Energy = 300mJ at TJ = 25oC  
„ Logic Level Gate Drive  
Package  
Symbol  
Device Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
V
BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)  
430  
24  
BVECS Emitter to Collector Breakdown Voltage (IC = 1mA) (Reverse Battery Condition)  
ESCIS25 Self Clamping Inductive Switching Energy (at starting TJ = 25°C)  
ESCIS150 Self Clamping Inductive Switching Energy (at starting TJ = 150°C)  
V
300  
mJ  
mJ  
A
170  
IC25  
Continuous Collector Current, at VGE = 4.0V, TC = 25°C  
Continuous Collector Current, at VGE = 4.0V, TC = 110°C  
Maximum Continuous Gate to Emitter Voltage  
Power Dissipation, at TC = 25°C  
21  
IC110  
VGEM  
19  
A
±10  
V
150  
W
PD  
Power Dissipation Derating, for TC > 25oC  
1
W/oC  
oC  
oC  
oC  
oC  
kV  
TJ  
Operating Junction Temperature Range  
-40 to 175  
-40 to 175  
300  
TSTG  
TL  
Storage Junction Temperature Range  
Max. Lead Temp. for Soldering (at 1.6mm from case for 10sec)  
Max. Package Temp. for Soldering (Package Body for 10 sec)  
Electrostatic Discharge Voltage, HBM model (100pfd, 1500 ohms)  
TPKG  
ESD  
260  
4
@2007 Fairchild Semiconductor Corporation  
FGB3040CS Rev. A  
1
www.fairchildsemi.com  

与FGB3040CS相关器件

型号 品牌 获取价格 描述 数据表
FGB3040CS_12 FAIRCHILD

获取价格

EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB3040G2-F085 ONSEMI

获取价格

IGBT,400V,26A,1.35V,300mJ,D2PAKEcoSPARK® II,N
FGB3040G2-F085C ONSEMI

获取价格

IGBT,400V,26A,1.35V,300mJ,D2PAKEcoSPARK® II,N
FGB3056-F085 ONSEMI

获取价格

IGBT,EcoSPARK® 300mJ,560V,N 沟道点火
FGB30N6S2 FAIRCHILD

获取价格

600V, SMPS II Series N-Channel IGBT
FGB30N6S2 ROCHESTER

获取价格

45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3
FGB30N6S2D FAIRCHILD

获取价格

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2DT FAIRCHILD

获取价格

600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGB30N6S2T ROCHESTER

获取价格

45A, 600V, N-CHANNEL IGBT, TO-263AB, PLASTIC, D2PAK-3
FGB30N6S2T FAIRCHILD

获取价格

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-263AB, PLASTIC,