型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDT3N40TF | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,UniFETTM,400V,2A,3.4Ω,SOT-223 | |
FDT434 | FAIRCHILD |
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P-Channel 2.5V Specified PowerTrench MOSFET | |
FDT434P | ONSEMI |
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P 沟道,2.5V 指定,PowerTrench™ MOSFET,-20V,-5.5A,5 | |
FDT434P | FAIRCHILD |
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P-Channel 2.5V Specified PowerTrench MOSFET | |
FDT434P_11 | FAIRCHILD |
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P-Channel 2.5V Specified PowerTrenchï MOSFE | |
FDT434P_NL | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal | |
FDT434PJ23ZD84Z | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal | |
FDT439N | FAIRCHILD |
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N-Channel 2.5V Specified EnhancementMode Field Effect Transistor | |
FDT439N | ONSEMI |
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N 沟道,2.5V指定增强型场效应晶体管,30V,6.3A,45mΩ | |
FDT439N_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me |