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FDT461N

更新时间: 2024-10-29 21:54:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
10页 262K
描述
N-Channel Logic Level PowerTrench MOSFET

FDT461N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.34雪崩能效等级(Eas):6.3 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):0.4 A
最大漏极电流 (ID):0.54 A最大漏源导通电阻:2 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.13 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDT461N 数据手册

 浏览型号FDT461N的Datasheet PDF文件第2页浏览型号FDT461N的Datasheet PDF文件第3页浏览型号FDT461N的Datasheet PDF文件第4页浏览型号FDT461N的Datasheet PDF文件第5页浏览型号FDT461N的Datasheet PDF文件第6页浏览型号FDT461N的Datasheet PDF文件第7页 
April 2004  
FDT461N  
N-Channel Logic Level PowerTrench MOSFET  
®
100V, 0.4A, 2.5Ω  
Features  
Applications  
r
= 1.45(Typ.), V = 4.5V, I = 0.4A  
Servo Motor Load Control  
DC-DC converters  
DS(ON)  
GS  
D
Q (tot) = 2.36nC (Typ.), V = 10V  
g
GS  
Low Miller Charge  
Low Q Body Diode  
RR  
DRAIN  
(FLANGE)  
D
D
GATE  
DRAIN  
SOURCE  
G
S
SOT-223  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Ratings  
100  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
V
V
DSS  
GS  
±20  
Drain Current  
o
o
A
A
0.54  
0.4  
Continuous (T = 25 C, V = 10V, R = 110 C/W)  
A
GS  
θJA  
I
D
o
o
Continuous (T = 25 C, V = 4.5V, R = 110 C/W)  
A
GS  
θJA  
Pulsed  
Figure 4  
6.3  
A
E
P
Single Pulse Avalanche Energy (Note 1)  
Power dissipation  
mJ  
W
AS  
1.13  
9
D
o
o
Derate above 25 C  
mW/ C  
o
T , T  
Operating and Storage Temperature  
-55 to 150  
C
J
STG  
Thermal Characteristics  
2
o
R
R
R
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.171 in  
110  
128  
147  
C/W  
θJA  
θJA  
θJA  
2
o
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.068 in  
C/W  
2
o
Thermal Resistance Junction to Ambient SOT-223, Pad area = 0.026 in  
C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12mm  
Quantity  
461  
FDT461N  
SOT-223  
13”  
2500 units  
©2004 Fairchild Semiconductor Corporation  
FDT461N Rev. A1  

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