是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-223 | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.34 | 雪崩能效等级(Eas): | 6.3 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 0.4 A |
最大漏极电流 (ID): | 0.54 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.13 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDT461N-F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDT4N50NZU | ONSEMI |
获取价格 |
Power MOSFET, N-Channel, UniFET II, Ultra FRF | |
FDT-500A | MERRIMAC |
获取价格 |
FREQUENCY DOUBLERS | |
FDT55AN06LA0 | ROCHESTER |
获取价格 |
11A, 60V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-4 | |
FDT55AN06LA0 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Met | |
FDT86102LZ | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 100 V, 6.6 A, | |
FDT86102LZ | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,100V,6.6A,28mΩ | |
FDT86102LZ | KEXIN |
获取价格 |
N-Channel MOSFET | |
FDT86106LZ | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET 100 V, 3.2 A, 108 m Ohm | |
FDT86106LZ | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,100V,3.2A,108mΩ |