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FDT86244 PDF预览

FDT86244

更新时间: 2024-09-13 12:33:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 239K
描述
N-Channel Power Trench MOSFET

FDT86244 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-223
包装说明:ROHS COMPLIANT PACKAGE-4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.9
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:167252Samacsys Pin Count:4
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT-223 4L-14Samacsys Released Date:2015-04-22 06:49:08
Is Samacsys:N其他特性:ULTRA-LOW RESISTANCE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):2.8 A
最大漏极电流 (ID):2.8 A最大漏源导通电阻:0.128 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDT86244 数据手册

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May 2011  
FDT86244  
N-Channel Power Trench® MOSFET  
150 V, 2.8 A, 128 mΩ  
Features  
General Description  
„ Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A  
„ Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A  
„ High performance trench technology for extremely low rDS(on)  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor‘s advanced Power Trench® process that has  
been optimized for rDS(on)  
,
switching performance and  
ruggedness.  
„ High power and current handling capability in a widely used  
surface mount package  
Applications  
„ Fast switching speed  
„ 100% UIL Tested  
„ RoHS Compliant  
„ Load Switch  
„ Primary Switch  
D
D
S
D
G
SOT-223  
G
S
D
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
150  
±20  
V
V
(Note 1a)  
2.8  
ID  
A
mJ  
W
12  
EAS  
PD  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note 3)  
(Note 1a)  
(Note 1b)  
12  
TA = 25 °C  
TA = 25 °C  
2.2  
Power Dissipation  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(Note 1)  
12  
55  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
Quantity  
86244  
FDT86244  
SOT-223  
12 mm  
2500 units  
©2011 Fairchild Semiconductor Corporation  
FDT86244 Rev.C  
www.fairchildsemi.com  
1

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