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FDT86256 PDF预览

FDT86256

更新时间: 2024-10-30 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 251K
描述
N-Channel PowerTrench® MOSFET 150 V, 1.2 A, 845 mΩ

FDT86256 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
雪崩能效等级(Eas):1 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):1.2 A
最大漏源导通电阻:0.845 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):10 W最大脉冲漏极电流 (IDM):2 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDT86256 数据手册

 浏览型号FDT86256的Datasheet PDF文件第2页浏览型号FDT86256的Datasheet PDF文件第3页浏览型号FDT86256的Datasheet PDF文件第4页浏览型号FDT86256的Datasheet PDF文件第5页浏览型号FDT86256的Datasheet PDF文件第6页 
August 2011  
FDT86256  
N-Channel PowerTrench® MOSFET  
150 V, 1.2 A, 845 mΩ  
Features  
General Description  
„ Max rDS(on) = 845 mΩ at VGS = 10 V, ID = 1.2 A  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench® process that has  
been especially tailored to minimize the on-state resistance and  
switching loss. G-S zener has been added to enhance ESD  
voltage level.  
„ Max rDS(on) = 1280 mΩ at VGS = 6.0 V, ID = 1.0 A  
„ Very low Qg and Qgd compared to competing trench  
technologies  
„ Fast switching speed  
„ 100% UIL Tested  
„ RoHS Compliant  
Applications  
„ DC-DC conversion  
„ Inverter  
„ Synchronous Rectifier  
D
D
S
D
G
SOT-223  
G
S
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
150  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
3
TC = 25 °C  
2.5  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
1.2  
-Pulsed  
2
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
1
10  
mJ  
W
TC = 25 °C  
TA = 25 °C  
PD  
Power Dissipation  
(Note 1a)  
2.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
12  
55  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
Quantity  
86256  
FDT86256  
SOT-223  
12 mm  
2500 units  
©2011 Fairchild Semiconductor Corporation  
FDT86256 Rev. C  
1
www.fairchildsemi.com  

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