5秒后页面跳转
FDT86113LZ PDF预览

FDT86113LZ

更新时间: 2024-10-30 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 179K
描述
N-Channel PowerTrench® MOSFET 100 V, 3.3 A, 100 m

FDT86113LZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-223
包装说明:ROHS COMPLIANT PACKAGE-4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.33
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:167251Samacsys Pin Count:4
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT-223 4L-13Samacsys Released Date:2015-04-22 06:46:02
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):3.3 A
最大漏极电流 (ID):3.3 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):5 pF
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.2 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDT86113LZ 数据手册

 浏览型号FDT86113LZ的Datasheet PDF文件第2页浏览型号FDT86113LZ的Datasheet PDF文件第3页浏览型号FDT86113LZ的Datasheet PDF文件第4页浏览型号FDT86113LZ的Datasheet PDF文件第5页浏览型号FDT86113LZ的Datasheet PDF文件第6页 
March 2011  
FDT86113LZ  
N-Channel PowerTrench® MOSFET  
100 V, 3.3 A, 100 m  
Features  
General Description  
This N-Channel logic Level MOSFETs are produced using  
Fairchild Semiconductor‘s advanced Power Trench® process  
that has been special tailored to minimize the on-state resistance  
and yet maintain superior switching performance. G-S zener  
has been added to enhance ESD voltage level.  
  Max rDS(on) = 100 mat VGS = 10 V, ID = 3.3 A  
  Max rDS(on) = 145 mat VGS = 4.5 V, ID = 2.7 A  
  High performance trench technology for extremely low rDS(on)  
  High power and current handling capability in a widely used  
surface mount package  
Application  
  DC - DC Switch  
  HBM ESD protection level > 3 KV typical (Note 4)  
  100% UIL tested  
  RoHS Compliant  
D
S
D
G
SOT-223  
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
100  
20  
3.3  
12  
9
2.2  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
Single Pulse Avalanche Energy  
Power Dissipation  
ID  
A
mJ  
W
EAS  
PD  
(Note 3)  
(Note 1a)  
(Note 1b)  
TA = 25 °C  
TA = 25 °C  
Power Dissipation  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RJC  
RJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
12  
55  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
FDT86113LZ  
Package  
SOT-223  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
2500 units  
86113LZ  
©2011 Fairchild Semiconductor Corporation  
FDT86113LZ Rev.C  
1
www.fairchildsemi.com  

FDT86113LZ 替代型号

型号 品牌 替代类型 描述 数据表
FDT86113LZ ONSEMI

功能相似

N 沟道 Power Trench® MOSFET 100V,3.3A,100mΩ

与FDT86113LZ相关器件

型号 品牌 获取价格 描述 数据表
FDT86244 FAIRCHILD

获取价格

N-Channel Power Trench MOSFET
FDT86244 ONSEMI

获取价格

150V N沟道Power Trench® MOSFET
FDT86244 KEXIN

获取价格

N-Channel MOSFET
FDT86246 FAIRCHILD

获取价格

N-Channel Power Trench® MOSFET 150 V, 2 A, 2
FDT86246 ONSEMI

获取价格

N 沟道 PowerTrench® MOSFET 150V,2A,236mΩ
FDT86246L ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,150V,2A,228mΩ
FDT86256 FAIRCHILD

获取价格

N-Channel PowerTrench® MOSFET 150 V, 1.2 A,
FDT86256 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,150V,1.2A,845mΩ
FDU044AN03L FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET
FDU0650 TOKO

获取价格

Fixed Inductors for Surface Mounting