Datasheet > FDT434P_11

FDT434P_11

更新时间： 2024-11-08 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	239K
描述
P-Channel 2.5V Specified PowerTrenchï MOSFET

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FDT434P_11 数据手册

April 2011

FDT434P

P-Channel 2.5V Specified PowerTrench^MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced

• –5.5 A, –20 V. R_DS(ON)= 0.050 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.070 Ω @ V_GS= –2.5 V.

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

• Low gate charge (13nC typical)

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Low Dropout Regulator

• DC/DC converter

• Load switch

• High power and current handling capability in a

widely used surface mount package.

• Motor driving

SOT-223

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

–6

–30

(Note 1a)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.3

1.1

(Note 1c)

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

434

FDT434P

13’’

12mm

2500 units

FDT434P Rev. C2

www.fairchildsemi.com

12 3 4 5

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