Datasheet > FDT457N

FDT457N

更新时间： 2024-06-27 12:14:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	120K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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FDT457N 数据手册

SMD Type

MOSFET

Transistors

N-Channel MOSFET

FDT457N

Unit:mm

SOT-223

6.50 0.2

3.00 0.1

Ƶ Features

ƽ 5 A, 30 V. RDS(ON) = 0.06 ȍ @ VGS = 10 V

DS(ON) = 0.09 ȍ @ VGS = 4.5 V.

ƽ High density cell design for extremely low RDS(ON)

ƽ High power and current handling capability in a widely

used surface mount package.

0.250

2.30 (typ)

0.84 (max)

Gauge Plane

0.66 (min)

1.Gate

2.Drain

3.Source

4.Drain

4.60 (typ)

Ƶ Absolute Maximum Ratings

= 25ć unless otherwise noted

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

Continuous Drain Current (Note 1a)

Pulsed Drain Current

(Note 1a)

(Note 1b)

(Note 1c)

Power Dissipation

1.3

1.1

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

(Note 1a)

(Note 1)

thJA

thJC

ć/W

150

-65 to 150

Storage Temperature Range

Notes:

stg

1. RșJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins. RșJC is guaranteed by design while RșCA is determined by

the user's board design.

a. 42ć/W when mounted on a 1 in²pad of2oz Cu.

b. 95ć/W when mounted on a 0.066 in²pad of 2oz Cu.

c. 110ć/W when mounted on a 0.00123in²pad of 2oz Cu.

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