Datasheet > FDT457NJ23Z

FDT457NJ23Z

更新时间： 2024-10-29 23:51:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
5页	86K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 5A I(D) \| SOT-223

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FDT457NJ23Z 数据手册

August 1998

FDT457N

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance,

provide superior switching performance. These products are

well suited to low voltage, low current applications such as

notebook computer power management, battery powered

circuits, and DC motor control.

5 A, 30 V. R_DS(ON)= 0.06 W @ V_GS= 10 V

R_DS(ON)= 0.090 W @ V_GS= 4.5 V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

SuperSOT^TM-3

SuperSOT^TM-8

SO-8

SuperSOT^TM-6

SOIC-16

SOT-223

(J23Z)

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

FDT457N

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Maximum Drain Current - Continuous

- Pulsed

±20

(Note 1a)

Maximum Power Dissipation

P_D

(Note 1b)

(Note 1c)

1.3

1.1

Operating and Storage Temperature Range

-65 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

* Order option J23Z for cropped center drain lead.

FDT457N Rev.C

12 3 4 5

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