5秒后页面跳转
FDT439N_NL PDF预览

FDT439N_NL

更新时间: 2024-11-08 13:00:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 289K
描述
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FDT439N_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.36
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):6.3 A
最大漏极电流 (ID):6.3 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDT439N_NL 数据手册

 浏览型号FDT439N_NL的Datasheet PDF文件第2页浏览型号FDT439N_NL的Datasheet PDF文件第3页浏览型号FDT439N_NL的Datasheet PDF文件第4页浏览型号FDT439N_NL的Datasheet PDF文件第5页浏览型号FDT439N_NL的Datasheet PDF文件第6页浏览型号FDT439N_NL的Datasheet PDF文件第7页 
June 1999  
FDT439N  
N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor  
General Description  
Features  
This N-Channel Enhancement mode field effect transistor  
is produced using Fairchild Semiconductor's proprietary,  
high cell density, DMOS technology. This very high  
density process is especially tailored to minimize on-  
state resistance, and provide superior switching  
performance. These products are well suited to low  
voltage, low current applications such as notebook  
computer power management, battery powered  
circuits, and DC motor control.  
• 6.3 A, 30 V. RDS(on) = 0.045 @ VGS = 4.5 V  
RDS(on) = 0.058 @ VGS = 2.5 V  
• Fast switching speed.  
• High power and current handling capabitlity in a  
widely used surface mount package.  
Applications  
• DC/DC converter  
• Load switch  
• Motor driving  
D
D
D
D
S
S
D
G
G
SOT-223  
(J23Z)  
*
S
G
D
S
G
SOT-223  
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
FDT439N  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
30  
V
V
A
VGSS  
8
±
(Note 1a)  
(Note 1a)  
ID  
6.3  
20  
PD  
Power Dissipation for Single Operation  
3
1.3  
W
(Note 1b)  
(Note 1c)  
1.1  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
(Note 1a)  
(Note 1)  
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
42  
12  
C/W  
C/W  
θJA  
θJC  
°
°
R
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDT439N  
FDT439N  
13’’  
12mm  
2500 units  
1999 Fairchild Semiconductor Corporation  
FDT439N, Rev. C  

FDT439N_NL 替代型号

型号 品牌 替代类型 描述 数据表
FDT439N ONSEMI

功能相似

N 沟道,2.5V指定增强型场效应晶体管,30V,6.3A,45mΩ
FDT439N FAIRCHILD

功能相似

N-Channel 2.5V Specified EnhancementMode Field Effect Transistor

与FDT439N_NL相关器件

型号 品牌 获取价格 描述 数据表
FDT439ND84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439NJ23Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439NL99Z FAIRCHILD

获取价格

暂无描述
FDT439NS62Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT457N FAIRCHILD

获取价格

N-Channel Enhancement Mode Field Effect Transistor
FDT457N ONSEMI

获取价格

N 沟道增强型场效应晶体管 30V,5A,60mΩ
FDT457N KEXIN

获取价格

N-Channel MOSFET
FDT457N_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal
FDT457NJ23Z ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
FDT457NL84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal