Datasheet > FDT439NL99Z

FDT439NL99Z

更新时间： 2024-11-08 14:50:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	145K
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FDT439NL99Z 数据手册

June 1999

FDT439N

N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor

General Description

Features

This N-Channel Enhancement mode field effect transistor

is produced using Fairchild Semiconductor's proprietary,

high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-

state resistance, and provide superior switching

performance. These products are well suited to low

voltage, low current applications such as notebook

computer power management, battery powered

circuits, and DC motor control.

6.3 A, 30 V. R_DS(on)= 0.045 Ω @ V_GS= 4.5 V

R_DS(on)= 0.058 Ω @ V_GS= 2.5 V

Fast switching speed.

High power and current handling capabitlity in a

widely used surface mount package.

Applications

DC/DC converter

Load switch

Motor driving

SOT-223

(J23Z)

SOT-223

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

FDT439N

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

V_GSS

(Note 1a)

I_D

6.3

P_D

Power Dissipation for Single Operation

1.3

(Note 1b)

(Note 1c)

1.1

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

C/W

θ^JA

θ^JC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDT439N

13’’

12mm

2500 units

1999 Fairchild Semiconductor Corporation

FDT439N, Rev. C

12 3 4 5

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