FDT434

更新时间： 2024-09-18 22:31:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	245K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDT434 数据手册

January 2000

FDT434P

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is produced

• –5.5 A, –20 V. R_DS(ON)= 0.050 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.070 Ω @ V_GS= –2.5 V.

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

low gate charge for superior switching performance.

• Low gate charge (13nC typical)

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Low Dropout Regulator

• DC/DC converter

• Load switch

• High power and current handling capability in a

widely used surface mount package.

• Motor driving

SOT-223*

(J23Z)

SOT-223

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

±8

Drain Current – Continuous

– Pulsed

(Note 1a)

–6

–30

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.3

(Note 1c)

1.1

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

434

FDT434P

13’’

12mm

2500 units

FDT434P Rev. C1 (W)

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

中文翻译

下载PDF

与FDT434相关器件

型号	品牌	获取价格	描述	数据表
FDT434P	ONSEMI	获取价格	P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-5.5A，5
FDT434P	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrench MOSFET
FDT434P_11	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrenchï MOSFE
FDT434P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal
FDT434PJ23ZD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal
FDT439N	FAIRCHILD	获取价格	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor
FDT439N	ONSEMI	获取价格	N 沟道，2.5V指定增强型场效应晶体管，30V，6.3A，45mΩ
FDT439N_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439ND84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439NJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me