Datasheet > FDT434P

FDT434P

更新时间： 2024-11-09 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关脉冲光电二极管晶体管
页数	文件大小	规格书
6页	285K
描述
P 沟道，2.5V 指定，PowerTrench™ MOSFET，-20V，-5.5A，50mΩ

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技术参数
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替代型号

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FDT434P 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PDSO-G4	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	5.61
Samacsys Confidence：	4	Samacsys Status：	Released
Samacsys PartID：	4490	Samacsys Pin Count：	4
Samacsys Part Category：	Integrated Circuit	Samacsys Package Category：	SOT223 (3-Pin)
Samacsys Footprint Name：	SOT-223 4L-1	Samacsys Released Date：	2015-04-22 06:27:19
Is Samacsys：	N	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	6 A	最大漏极电流 (ID)：	6 A
最大漏源导通电阻：	0.05 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G4	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	3 W
最大脉冲漏极电流 (IDM)：	30 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDT434P 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

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12 3 4 5 6

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FDT434P 替代型号

型号	品牌	替代类型	描述	数据表
FDT434P_NL	FAIRCHILD	功能相似	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal
FDT434P	FAIRCHILD	功能相似	P-Channel 2.5V Specified PowerTrench MOSFET

与FDT434P相关器件

型号	品牌	获取价格	描述	数据表
FDT434P_11	FAIRCHILD	获取价格	P-Channel 2.5V Specified PowerTrenchï MOSFE
FDT434P_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal
FDT434PJ23ZD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal
FDT439N	FAIRCHILD	获取价格	N-Channel 2.5V Specified EnhancementMode Field Effect Transistor
FDT439N	ONSEMI	获取价格	N 沟道，2.5V指定增强型场效应晶体管，30V，6.3A，45mΩ
FDT439N_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439ND84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439NJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
FDT439NL99Z	FAIRCHILD	获取价格	暂无描述
FDT439NS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me

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