是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SOT-223, 4 PIN | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 24 weeks | 风险等级: | 0.95 |
雪崩能效等级(Eas): | 46 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 400 V |
最大漏极电流 (Abs) (ID): | 2 A | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 3.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 8 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDT434 | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrench MOSFET | |
FDT434P | ONSEMI |
获取价格 |
P 沟道,2.5V 指定,PowerTrench™ MOSFET,-20V,-5.5A,5 | |
FDT434P | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrench MOSFET | |
FDT434P_11 | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrenchï MOSFE | |
FDT434P_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal | |
FDT434PJ23ZD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal | |
FDT439N | FAIRCHILD |
获取价格 |
N-Channel 2.5V Specified EnhancementMode Field Effect Transistor | |
FDT439N | ONSEMI |
获取价格 |
N 沟道,2.5V指定增强型场效应晶体管,30V,6.3A,45mΩ | |
FDT439N_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
FDT439ND84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Me |