Datasheet > FDS5690-NBBM009A

FDS5690-NBBM009A

更新时间： 2024-12-02 11:14:11

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管
页数	文件大小	规格书
6页	313K
描述
N 沟道，PowerTrench® MOSFET，60V，7A，28mΩ

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FDS5690-NBBM009A 数据手册

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与FDS5690-NBBM009A相关器件

型号	品牌	获取价格	描述	数据表
FDS5692Z	FAIRCHILD	获取价格	N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm
FDS-60	YAMAICHI	获取价格	Card Edge Connector, 60 Contact(s), 2 Row(s), Female, IDC Terminal, Socket
FDS602SP	MITSUBISHI	获取价格	Rectifier Diode, 3 Phase, 360A, Silicon,
FDS602ST	MITSUBISHI	获取价格	Rectifier Diode, 3 Phase, 665A, Silicon,
FDS602TX	MITSUBISHI	获取价格	Rectifier Diode, 3 Phase, 215A, Silicon,
FDS6064N3	FAIRCHILD	获取价格	20V N-Channel PowerTrench MOSFET
FDS6064N3_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 23A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-
FDS6064N7	FAIRCHILD	获取价格	20V N-Channel PowerTrench MOSFET
FDS6064N7D84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 23A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
FDS6064N7L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 23A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me

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