Datasheet > FDS6294_07

FDS6294_07

更新时间： 2024-12-01 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	348K
描述
30V N-Channel Fast Switching PowerTrench MOSFET

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FDS6294_07 数据手册

February 2007

FDS6294

30V N-Channel Fast Switching PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 13 A, 30 V.

R_DS(ON)= 11.3 mΩ @ V_GS= 10 V

R_DS(ON)= 14.4 mΩ @ V_GS= 4.5 V

• Low gate charge (10 nC typical)

• High performance trench technology for extremely

low R_DS(ON)

Applications

• DC/DC converter

• Power management

• Load switch

• High power and current handling capability.

• RoHS Compliant

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.0

P_D

1.2

E_AS

Single Pulse Avalanche Energy

(Note 3)

181

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6294

13’’

12mm

2500 units

FDS6294 Rev D1 (W)

2007 Fairchild Semiconductor Corporation

12 3 4 5 6

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