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FDS6572AL86Z PDF预览

FDS6572AL86Z

更新时间: 2024-01-03 07:30:38
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 252K
描述
Small Signal Field-Effect Transistor, 16A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS6572AL86Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.36配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):16 A
最大漏源导通电阻:0.006 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS6572AL86Z 数据手册

 浏览型号FDS6572AL86Z的Datasheet PDF文件第2页浏览型号FDS6572AL86Z的Datasheet PDF文件第3页浏览型号FDS6572AL86Z的Datasheet PDF文件第4页浏览型号FDS6572AL86Z的Datasheet PDF文件第5页浏览型号FDS6572AL86Z的Datasheet PDF文件第6页浏览型号FDS6572AL86Z的Datasheet PDF文件第7页 
September 2001  
FDS6572A  
20V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS(ON) and fast switching speed.  
·
16 A, 20 V.  
RDS(ON) = 6 mW @ VGS = 4.5 V  
RDS(ON) = 8 mW @ VGS = 2.5 V  
·
·
Low gate charge (57 nC)  
High performance trench technology for extremely  
low RDS(ON)  
Applications  
·
DC/DC converter  
·
High power and current handling capability  
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
±12  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
16  
80  
2.5  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
PD  
W
1.2  
(Note 1c)  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
50  
25  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6572A  
FDS6572A  
13’’  
12mm  
2500 units  
FDS6572A Rev C (W)  
Ó2001 Fairchild Semiconductor Corporation  

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