Datasheet > FDS6612A

FDS6612A

更新时间： 2023-09-03 20:39:05

品牌	Logo	应用领域
安森美 - ONSEMI		PC 开关光电二极管晶体管
页数	文件大小	规格书
9页	977K
描述
单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，8.4A，22mΩ

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技术参数
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FDS6612A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOT
包装说明：	SO-8	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.37
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	8.4 A	最大漏源导通电阻：	0.022 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	8
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL	表面贴装：	YES
端子面层：	MATTE TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDS6612A 数据手册

ON Semiconductor

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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FDS6612A 替代型号

型号	品牌	替代类型	描述	数据表
BSO220N03MSG	INFINEON	功能相似	OptiMOS?3 M-Series Power-MOSFET

与FDS6612A相关器件

型号	品牌	获取价格	描述	数据表
FDS6612A_03	FAIRCHILD	获取价格	Single N-Channel, Logic-Level, PowerTrench MOSFET
FDS6612AD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDS6612AL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDS6612A-NB5E029A	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6612A-NB5E029A	ONSEMI	获取价格	单 N 沟道，逻辑电平，Power Trench® MOSFET，30V，8.4A，22m
FDS6612A-OLDDIE	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6612AS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDS6614A	FAIRCHILD	获取价格	N-Channel Logic Level PowerTrench MOSFET
FDS6614AF011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
FDS6614AL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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