是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 8.4 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6612A-OLDDIE | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDS6612AS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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FDS6614A | FAIRCHILD |
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N-Channel Logic Level PowerTrench MOSFET |
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FDS6614AF011 | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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FDS6614AL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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FDS6614AL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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FDS6630 | FAIRCHILD |
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N-Channel Logic Level PowerTrenchTM MOSFET |
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FDS6630A | FAIRCHILD |
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N-Channel Logic Level PowerTrenchTM MOSFET |
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FDS6630A | ONSEMI |
获取价格 |
N 沟道,逻辑电平,PowerTrenchTM MOSFET,30V,6.5A,38mΩ |
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FDS6630A_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |
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