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FDS6612A-NB5E029A PDF预览

FDS6612A-NB5E029A

更新时间: 2023-09-03 20:39:05
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 977K
描述
单 N 沟道,逻辑电平,Power Trench® MOSFET,30V,8.4A,22mΩ

FDS6612A-NB5E029A 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):8.4 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
Base Number Matches:1

FDS6612A-NB5E029A 数据手册

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