Datasheet > FDS6576_06

FDS6576_06

更新时间： 2024-09-30 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	137K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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FDS6576_06 数据手册

December 2006

FDS6576

P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

–11 A, –20 V. R_DS(ON)= 0.014 :ꢀ@ V_GS= –4.5 V

_DS(ON)= 0.020 :ꢀ@ V_GS= –2.5 V

• Extended V_GSSrange (r12V) for battery applications.

This P-Channel 2.5V specified MOSFET is in a rugged

gate version^®of Fairchild Semiconductor's advanced

PowerTrench^®process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V - 12V).

• Low gate charge (43nC typical).

• Fast switching speed.

Applications

• Load switch

• Battery protection

• Power management

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability.

• RoHS Compliant.

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Ratings

–20

Units

Drain-Source Voltage

V_GSS

Gate-Source Voltage

r 12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–11

–50

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_TJA

R_TJC

qC/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6576

13’’

12mm

2500 units

FDS6576 Rev E3

2006 Fairchild Semiconductor Corporation

12 3 4 5

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