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FDS6574A

更新时间: 2024-02-05 00:30:40
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 92K
描述
20V N-Channel PowerTrench MOSFET

FDS6574A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):16 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

FDS6574A 数据手册

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June 2001  
PRELIMINARY  
FDS6574A  
20V N-Channel PowerTrench MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS(ON) and fast switching speed.  
16 A, 20 V.  
RDS(ON) = 6 m@ VGS = 4.5 V  
RDS(ON) = 7 m@ VGS = 2.5 V  
RDS(ON) = 9 m@ VGS = 1.8 V  
Low gate charge  
Applications  
High performance trench technology for extremely  
DC/DC converter  
low RDS(ON)  
High power and current handling capability  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
± 8  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
16  
80  
2.5  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
PD  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6574A  
FDS6574A  
13’’  
12mm  
2500 units  
FDS6574A Rev B (W)  
2001 Fairchild Semiconductor Corporation  

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