是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SO-8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | Factory Lead Time: | 1 week |
风险等级: | 0.95 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 167216 |
Samacsys Pin Count: | 8 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | Small Outline Packages | Samacsys Footprint Name: | SO 8L NB (SOIC) |
Samacsys Released Date: | 2015-04-13 16:43:27 | Is Samacsys: | N |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.013 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 2.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDS6675BZ | ONSEMI |
类似代替 |
P 沟道,PowerTrench® MOSFET,-30V,-11A,13mΩ | |
FDS6375 | ONSEMI |
类似代替 |
P 沟道,2.5V 指定,PowerTrench™ MOSFET,-20V,-8A,24m | |
FDS4435BZ | ONSEMI |
类似代替 |
P 沟道,PowerTrench® MOSFET,-30V,-8.8A,20mΩ |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6575_01 | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrench?MOSFET | |
FDS6575_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
FDS6575D84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
FDS6575L86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
FDS6575S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
FDS6576 | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrenchTM MOSFET | |
FDS6576 | ONSEMI |
获取价格 |
P沟道2.5V额定PowerTrench® MOSFET | |
FDS6576_06 | FAIRCHILD |
获取价格 |
P-Channel 2.5V Specified PowerTrench MOSFET | |
FDS6576_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- | |
FDS6576D84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 11A I(D), 20V, 1-Element, P-Channel, Silicon, Metal- |