Datasheet > FDS6375_01

FDS6375_01

更新时间： 2024-12-02 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	69K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

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FDS6375_01 数据手册

September 2001

FDS6375

P-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 8V).

· –8 A, –20 V. R_DS(ON)= 24 mW @ V_GS= –4.5 V

R_DS(ON)= 32 mW @ V_GS= –2.5 V

· Low gate charge (26 nC typical)

· High performance trench technology for extremely

Applications

low R_DS(ON)

· Power management

· Load switch

· High current and power handling capability

· Battery protection

SO-8

Pin 1SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

±8

–8

Drain Current – Continuous

– Pulsed

(Note 1a)

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6375

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

FDS6375 Rev E(W)

12 3 4 5

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