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FDS6375F011 PDF预览

FDS6375F011

更新时间: 2024-12-01 21:11:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
8页 244K
描述
Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS6375F011 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.2配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS6375F011 数据手册

 浏览型号FDS6375F011的Datasheet PDF文件第2页浏览型号FDS6375F011的Datasheet PDF文件第3页浏览型号FDS6375F011的Datasheet PDF文件第4页浏览型号FDS6375F011的Datasheet PDF文件第5页浏览型号FDS6375F011的Datasheet PDF文件第6页浏览型号FDS6375F011的Datasheet PDF文件第7页 
September 2001  
FDS6375  
P-Channel 2.5V Specified PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
management applications with a wide range of gate  
drive voltage (2.5V – 8V).  
· –8 A, –20 V. RDS(ON) = 24 mW @ VGS = –4.5 V  
RDS(ON) = 32 mW @ VGS = –2.5 V  
· Low gate charge (26 nC typical)  
· High performance trench technology for extremely  
Applications  
low RDS(ON)  
· Power management  
· Load switch  
· High current and power handling capability  
· Battery protection  
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8  
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
–20  
V
V
A
VGSS  
ID  
Gate-Source Voltage  
±8  
–8  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1c)  
(Note 1)  
50  
125  
25  
RqJA  
RqJA  
RqJC  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6375  
FDS6375  
13’’  
12mm  
2500 units  
Ó2001 Fairchild Semiconductor Corporation  
FDS6375 Rev E(W)  

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