生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.2 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.024 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6375L86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
FDS6375S62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
FDS6375T/R | FAIRCHILD |
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Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o | |
FDS-64 | YAMAICHI |
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Card Edge Connector, 64 Contact(s), 2 Row(s), Female, IDC Terminal, Socket | |
FDS6570A | FAIRCHILD |
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Single N-Channel 2.5V Specified PowerTrench MOSFET | |
FDS6570A | ONSEMI |
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单 N 沟道,2.5V 指定,PowerTrench® MOSFET,20V,15A,7. | |
FDS6570A | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
FDS6570A_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal- | |
FDS6570AD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal- | |
FDS6570AL86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal- |