Datasheet > FDS6375D84Z

FDS6375D84Z

更新时间： 2023-02-26 15:12:12

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	244K
描述
Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS6375D84Z 数据手册

September 2001

FDS6375

P-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 8V).

· –8 A, –20 V. R_DS(ON)= 24 mW @ V_GS= –4.5 V

R_DS(ON)= 32 mW @ V_GS= –2.5 V

· Low gate charge (26 nC typical)

· High performance trench technology for extremely

Applications

low R_DS(ON)

· Power management

· Load switch

· High current and power handling capability

· Battery protection

SO-8

Pin 1SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

V_GSS

I_D

Gate-Source Voltage

±8

–8

Drain Current – Continuous

– Pulsed

(Note 1a)

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

1.0

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6375

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

FDS6375 Rev E(W)

12 3 4 5 6 7 8

中文翻译

下载PDF

与FDS6375D84Z相关器件

型号	品牌	获取价格	描述	数据表
FDS6375F011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDS6375L86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDS6375S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDS6375T/R	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-o
FDS-64	YAMAICHI	获取价格	Card Edge Connector, 64 Contact(s), 2 Row(s), Female, IDC Terminal, Socket
FDS6570A	FAIRCHILD	获取价格	Single N-Channel 2.5V Specified PowerTrench MOSFET
FDS6570A	ONSEMI	获取价格	单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，15A，7.
FDS6570A	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDS6570A_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-
FDS6570AD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-