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FDS6375

更新时间: 2024-12-01 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管
页数 文件大小 规格书
8页 196K
描述
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

FDS6375 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS6375 数据手册

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February 1999  
FDS6375  
Single P-Channel 2.5V Specified PowerTrenchTM MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is produced  
using Fairchild Semiconductor's advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain superior  
switching performance.  
-8.0 A, -20 V. RDS(on) = 0.024 @ VGS = -4.5 V  
RDS(on) = 0.032 @ VGS = -2.5 V.  
Low gate charge (23nC typical).  
Fast switching speed.  
These devices are well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
High power and current handling capability.  
DC/DC converter  
Load switch  
Battery Protection  
D
5
6
7
8
4
D
D
D
3
2
1
G
S
S
SO-8  
S
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
-20  
V
V
A
8
±
(Note 1a)  
(Note 1a)  
-8.0  
-50  
PD  
Power Dissipation for Single Operation  
2.5  
W
(Note 1b)  
(Note 1c)  
1.2  
1
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
TJ, T  
stg  
Thermal Characteristics  
θ
(Note 1a)  
(Note 1)  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
50  
25  
C/W  
C/W  
JA  
°
°
JC  
θ
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDS6375  
FDS6375  
13’’  
12mm  
2500 units  
1999 Fairchild Semiconductor Corporation  
FDS6375 Rev. C  

FDS6375 替代型号

型号 品牌 替代类型 描述 数据表
NDS8434A FAIRCHILD

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Single P-Channel Enhancement Mode Field Effect Transistor
NDS8434 FAIRCHILD

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Single P-Channel Enhancement Mode Field Effect Transistor
TPS1100DR TI

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TRANSISTOR | MOSFET | P-CHANNEL | 15V V(BR)DSS | 1.6A I(D) | SO

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