Datasheet > FDS6299S_07

FDS6299S_07

更新时间： 2024-12-01 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	598K
描述
30V N-Channel PowerTrench㈢ SyncFET⑩

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中文翻译

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FDS6299S_07 数据手册

November 2007

FDS6299S

30V N-Channel PowerTrench^®SyncFET^™

General Description

Features

The FDS6299S is designed to replace a single SO-8

MOSFET and Schottky diode in synchronous DC:DC

power supplies. This 30V MOSFET is designed to

maximize power conversion efficiency, providing a low

R_DS(ON)and low gate charge. The FDS6299S includes

a patented combination of a MOSFET monolithically

integrated with a Schottky diode.

•

21 A, 30 V.

R_DS(ON)= 3.9 mΩ @ V_GS= 10 V

R_DS(ON)= 5.1 mΩ @ V_GS= 4.5 V

•

Includes SyncFET Schottky body diode

High performance trench technology for extremely low

R_DS(ON)and fast switching

Applications

•

High power and current handling capability

100% R_G(Gate Resistance) tested

• Synchronous Rectifier for DC/DC Converters

• Notebook Vcore low side switch

• Point of load low side switch

Termination is Lead-free and RoHS Compliant

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

105

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

°C/W

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6299S

13’’

12mm

2500 units

FDS6299S Rev C1 (W)

12 3 4 5 6

中文翻译

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