Datasheet > FDS6298_07

FDS6298_07

更新时间： 2024-09-30 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	279K
描述
30V N-Channel Fast Switching PowerTrench MOSFET

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FDS6298_07 数据手册

April 2007

FDS6298

30V N-Channel Fast Switching PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

¢ 13 A, 30 V.

R_DS(ON)= 9 mΩ @ V_GS= 10 V

R_DS(ON)= 12 mΩ @ V_GS= 4.5 V

¢ Low gate charge (10nC @ V_GS=5V)

¢ Very low Miller Charge (3nC)

¢ Low Rg (1 Ohm)

Applications

¢ Control Switch for DC-DC Buck converters

¢ Notebook Vcore

¢ ROHS Compliant

¢ Telecom / Networking Point of Load

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

I_D

Power Dissipation for Single Operation

Single Pulse Avalanche Energy

(Note 1a)

(Note 1b)

(Note 3)

3.0

P_D

1.2

E_AS

181

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6298

13’’

12mm

2500 units

FDS6298 Rev. C1 ( W)

2007 Fairchild Semiconductor Corporation

12 3 4 5 6

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