Datasheet > FDS5692Z

FDS5692Z

更新时间： 2024-01-21 23:51:20

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	121K
描述
N-Channel UltraFET Trench MOSFET 50V, 5.8A, 24m Ohm

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FDS5692Z 数据手册

February 2006

FDS5692Z

N-Channel UltraFET Trench^®MOSFET

50V, 5.8A, 24mΩ

General Description

Features

Max r_DS(on)= 24mΩ at V_GS= 10V, I_D= 5.8A

Max r_DS(on)= 33mΩ at V_GS= 4.5V, I_D= 5.6A

ESD protection diode (note 3)

Low Qgd

This N-Channel UltraFET device has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low r_DS(on)and fast switching speed.

Applications

DC/DC converter

Fast switching speed

SO-8

MOSFET Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DS

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

I_D

Drain Current – Continuous

(Note 1a)

5.8

– Pulsed

E_AS

P_D

Single Pulse Avalanche Energy

UltraFET Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

1.1

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to 150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

Quantity

FDS5692Z

SO-8

13”

12mm

2500units

www.fairchildsemi.com

FDS5692Z Rev C(W)

12 3 4 5 6

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