FDS6064N7

更新时间： 2024-11-30 22:40:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	199K
描述
20V N-Channel PowerTrench MOSFET

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FDS6064N7 数据手册

May 2003

FDS6064N7



20V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

• 23 A, 20 V. R_DS(ON)

R_DS(ON)

= 3.5 mΩ @ V_GS= 4.5 V

= 4 mΩ @ V_GS= 2.5 V

= 6 mΩ @ V_GS= 1.8 V

R_DS(ON)

• High performance trench technology for extremely

low R_DS(ON)

Applications

• High power and current handling capability

• Fast switching, low gate charge

• Synchronous rectifier

• DC/DC converter

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

± 8

(Note 1a)

Power Dissipation

3.0

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

0.5

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6064N7

13’’

12mm

2500 units

FDS6064N7 Rev D2 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5 6

中文翻译

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