Datasheet > FDS6064N7D84Z

FDS6064N7D84Z

更新时间： 2024-12-02 04:59:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	118K
描述
Power Field-Effect Transistor, 23A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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FDS6064N7D84Z 数据手册

February 2002

PRELIMINARY

FDS6064N7

20V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

23 A, 20 V. R_DS(ON)

R_DS(ON)

= 3.5 mW @ V_GS= 4.5 V

= 4 mW @ V_GS= 2.5 V

= 6 mW @ V_GS= 1.8 V

R_DS(ON)

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability

Fast switching, low gate charge

Synchronous rectifier

DC/DC converter

Bottomlessä SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Bottomless

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

± 8

I_D

(Note 1a)

Power Dissipation

3.0

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

0.5

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6064N7

13’’

12mm

2500 units

FDS6064N7 Rev B (W)

Ó2002 Fairchild Semiconductor Corporation

12 3 4 5 6

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