Datasheet > FDS4770_04

FDS4770_04

更新时间： 2024-11-13 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	106K
描述
40V N-Channel PowerTrench?MOSFET

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数据手册

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FDS4770_04 数据手册

May 2004

FDS4770

40V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

13.2 A, 40 V. R_DS(ON)= 7.5 mW @ V_GS= 10 V

Low gate charge

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability

DC/DC converter

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

13.2

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.4

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4770

13’’

11mm

2500 units

FDS4770 Rev C(W)

Ó2004 Fairchild Semiconductor Corporation

12 3 4 5 6

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