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FDS4935

更新时间: 2024-11-12 21:54:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 123K
描述
Dual 30V P-Channel PowerTrench MOSFET

FDS4935 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.25配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS4935 数据手册

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June 2001  
FDS4935  
Dual 30V P-Channel PowerTrench MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications requiring a wide range of gave drive  
voltage ratings (4.5V – 25V).  
–7 A, –30 V  
RDS(ON) = 23 m@ VGS = –10 V  
RDS(ON) = 35 m@ VGS = –4.5 V  
Low gate charge (15nC typical)  
Fast switching speed  
Applications  
Power management  
Load switch  
High performance trench technology for extremely  
low RDS(ON)  
Battery protection  
High power and current handling capability  
D1  
5
6
7
8
4
3
2
1
D1  
D2  
Q1  
Q2  
D2  
G1  
SO-8  
S1  
G2  
S2  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
–30  
V
V
A
VGSS  
Gate-Source Voltage  
±25  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–7  
–30  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
PD  
PD  
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
W
1
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
RθJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS4935  
FDS4935  
13’’  
12mm  
2500 units  
FDS4935 Rev B(W)  
2003 Fairchild Semiconductor Corporation  

FDS4935 替代型号

型号 品牌 替代类型 描述 数据表
FDS4935BZ FAIRCHILD

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