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FDS5680 PDF预览

FDS5680

更新时间: 2024-09-22 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 262K
描述
60V N-Channel PowerTrench⑩ MOSFET

FDS5680 数据手册

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July 1999  
FDS5680  
60V N-Channel PowerTrenchTM MOSFET  
General Description  
Features  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor's advanced PowerTrench process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
• 8 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V  
RDS(ON) = 0.025 @ VGS = 6 V.  
• Low gate charge (30nC typical).  
• Fast switching speed.  
These devices are well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
• High performance trench technology for extremely  
low RDS(ON)  
.
• Highpowerandcurrenthandlingcapability.  
Applications  
• DC/DC converter  
• Load switch  
• Motor drives  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
60  
V
V
A
±20  
Drain Current - Continuous  
- Pulsed  
(Note 1a)  
8
50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDS5680  
FDS5680  
13’’  
12mm  
2500 units  
1999 Fairchild Semiconductor Corporation  
FDS5680 Rev. C  

FDS5680 替代型号

型号 品牌 替代类型 描述 数据表
FDS5680 ONSEMI

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