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FDS5351 PDF预览

FDS5351

更新时间: 2024-09-27 04:18:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管PC
页数 文件大小 规格书
6页 237K
描述
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ

FDS5351 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:2543110Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:SOIC8 CASE 751EB ISSUE A_3Samacsys Released Date:2020-02-04 11:40:13
Is Samacsys:N雪崩能效等级(Eas):73 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):6.1 A最大漏极电流 (ID):6.1 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):5 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS5351 数据手册

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April 2008  
FDS5351  
N-Channel PowerTrench® MOSFET  
60V, 6.1A, 35mΩ  
Features  
General Description  
„ Max rDS(on) = 35mat VGS = 10V, ID = 6.1A  
„ Max rDS(on) = 42mat VGS = 4.5V, ID = 5.5A  
„ High performance trench technology for extremely low rDS(on)  
„ 100% UIL Tested  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor‘s advanced Power Trench® process that has  
been especially tailored to minimize the on-state resistance and  
yet maintain superior switching performance.  
„ RoHS Compliant  
Application  
„ Inverter Switch  
„ Synchronous Rectifier  
„ Load Switch  
D
D
G
S
S
S
4
3
2
1
5
D
D
D
D
D
D
6
7
8
G
SO-8  
S
S
Pin 1  
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
60  
V
V
±20  
6.1  
ID  
A
mJ  
W
30  
EAS  
PD  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note 3)  
73  
TA = 25°C  
TA = 25°C  
(Note 1a)  
(Note 1b)  
5
2.5  
Power Dissipation  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(Note 1)  
25  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12mm  
Quantity  
2500units  
FDS5351  
FDS5351  
SO-8  
13’’  
1
©2008 Fairchild Semiconductor Corporation  
FDS5351 Rev.C  
www.fairchildsemi.com  

FDS5351 替代型号

型号 品牌 替代类型 描述 数据表
SI4436DY-T1-E3 VISHAY

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