Datasheet > FDS4953_02

FDS4953_02

更新时间： 2024-01-30 23:26:20

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	97K
描述
Dual 30V P-Channel PowerTrench MOSFET

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FDS4953_02 数据手册

May 2002

FDS4953

Dual 30V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

· –5 A, –30 V

R_DS(ON)= 55 mW @ V_GS= –10 V

R_DS(ON)= 95 mW @ V_GS= –4.5 V

· Low gate charge (6nC typical)

· Fast switching speed

Applications

· Power management

· Load switch

· High performance trench technology for extremely

low R_DS(ON)

· Battery protection

· High power and current handling capability

SO-8

G2 S

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

–5

–20

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS4953

13’’

12mm

2500 units

Ó2002 Fairchild Semiconductor Corporation

FDS4953 Rev D1(W)

12 3 4 5

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