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FDS5690

更新时间: 2024-09-27 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 237K
描述
60V N-Channel PowerTrench MOSFET

FDS5690 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.29
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):7 A
最大漏极电流 (ID):7 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDS5690 数据手册

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March 2000  
FDS5690  
60V N-Channel PowerTrench MOSFET  
Features  
General Description  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor's advanced PowerTrench process that  
has been especially tailored to minimize on-state  
resistance and yet maintain superior switching  
performance.  
7 A, 60 V. RDS(on) = 0.028 @ VGS = 10 V  
DS(on) = 0.033 @ VGS = 6 V.  
R
Low gate charge (23nC typical).  
Fast switching speed.  
These devices are well suited for low voltage and battery  
powered applications where low in-line power loss and  
fast switching are required.  
High performance trench technology for extremely  
low RDS(ON)  
.
Applications  
High power and current handling capability.  
DC/DC converter  
Motor drives  
D
5
6
7
8
4
3
2
1
D
D
D
G
S
S
SO-8  
S
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
60  
V
V
A
20  
7
±
(Note 1a)  
(Note 1a)  
50  
PD  
Power Dissipation for Single Operation  
2.5  
W
(Note 1b)  
(Note 1c)  
1.2  
1
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
C
°
Thermal Characteristics  
θ
(Note 1a)  
(Note 1)  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
50  
25  
C/W  
C/W  
JA  
°
°
JC  
θ
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDS5690  
FDS5690  
13’’  
12mm  
2500 units  
2000 Fairchild Semiconductor Corporation  
FDS5690 Rev. C  

FDS5690 替代型号

型号 品牌 替代类型 描述 数据表
IRF7478PBF INFINEON

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