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FDS5682 PDF预览

FDS5682

更新时间: 2024-02-19 22:38:01
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关光电二极管
页数 文件大小 规格书
12页 379K
描述
N-Channel PowerTrench MOSFET

FDS5682 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:LEAD FREE, SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.36Is Samacsys:N
雪崩能效等级(Eas):94 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):6.7 A
最大漏极电流 (ID):7.5 A最大漏源导通电阻:0.021 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS5682 数据手册

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August 2005  
FDS5682  
N-Channel PowerTrench® MOSFET  
60V, 7.5A, 21mΩ  
Features  
General Description  
„ rDS(ON) = 21m, VGS = 10V, ID = 7.5A  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
„ rDS(ON) = 26.5m, VGS = 4.5V, ID = 6.7A  
„ High performance trench technology for extremely low  
rDS(ON)  
rDS(ON) and fast switching speed.  
„ Low gate charge  
„ High power and current handling capability  
Applications  
„ DC/DC converters  
Branding Dash  
5
6
7
8
4
3
2
1
5
1
2
3
4
SO-8  
©2005 Fairchild Semiconductor Corporation  
FDS5682 Rev. A  
1
www.fairchildsemi.com  

FDS5682 替代型号

型号 品牌 替代类型 描述 数据表
STS7NF60L STMICROELECTRONICS

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