Datasheet > FDS5682_08

FDS5682_08

更新时间： 2024-12-01 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	556K
描述
N-Channel PowerTrench MOSFET 60V, 7.5A, 21m ohm

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FDS5682_08 数据手册

May 2008

FDS5682

N-Channel PowerTrench^®MOSFET

60V, 7.5A, 21mΩ

Features

General Description

r_DS(ON)= 21mΩ, V_GS= 10V, I_D= 7.5A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(ON)= 26.5mΩ, V_GS= 4.5V, I_D= 6.7A

High performance trench technology for extremely low

r_DS(ON)

r_DS(ON)and fast switching speed.

Low gate charge

High power and current handling capability

Applications

DC/DC converters

Branding Dash

SO-8

FDS5682 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
FDS5682_NL	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDS5690	FAIRCHILD	获取价格	60V N-Channel PowerTrench MOSFET
FDS5690	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，60V，7A，28mΩ
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FDS5690D84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-o
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